Тема лекции: “Глубокоуровневая спектроскопия переходных процессов для характеризации гибридных перовскитных солнечных элементов”.
Язык лекции: английский.
Лектор: Шико Али Сехпар.
Abstract: Deep-level transient spectroscopy is an experimental tool utilized in order to study the electrical active defects i.e. carrier traps in the semiconductor materials. When it comes to perovskite solar cells, trap states can influence the nonradiative recombination dynamics with strong impact on various performance indicators i.e. fill factor, open circuit voltage and efficiency. Thus, it is of paramount importance to get these traps centers characterized. The present work deals with the study of trap levels in mesoscopic perovskite solar cell structure using DLTS. Donor level was found to be existing at an energy of 0.2 eV below the conduction band of perovskite. Other two deep trap levels are found with energies of 0.57 eV and 0.74 eV, with the first one related to a hole trap while the second one to an electron trap.
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