Публикации

  • Lee, I.-H., Kim, T.-H., Polyakov, A.Y., Chernykh, A.V., Skorikov, M.L., Yakimov, E.B., Alexanyan, L.A., Shchemerov, I.V., Vasilev, A.A., Pearton, S.J. Degradation by sidewall recombination centers in GaN blue micro-LEDs at diameters<30 µm, (2022) Journal of Alloys and Compounds, 921, art. no. 166072.
  • Son, H., Uthirakumar, P., Polyakov, A.Y., Park, J.H., Lee, K.H., Lee, I.-H. Impact of porosity on the structural and optoelectronic properties of nanoporous GaN double layer fabricated via combined electrochemical and photoelectrochemical etching, (2022) Applied Surface Science, 592, art. no. 153248.
  • Polyakov, A.Y., Nikolaev, V.I., Meshkov, I.N., Siemek, K., Lagov, P.B., Yakimov, E.B., Pechnikov, A.I., Orlov, O.S., Sidorin, A.A., Stepanov, S.I., Shchemerov, I.V., Vasilev, A.A., Chernykh, A.V., Losev, A.A., Miliachenko, A.D., Khrisanov, I.A., Pavlov, Yu.S., Kobets, U.A., Pearton, S.J. Point defect creation by proton and carbon irradiation of α-Ga2O3, (2022) Journal of Applied Physics, 132 (3), art. no. 035701.
  • Polyakov, A., Nikolaev, V., Stepanov, S., Almaev, A., Pechnikov, A., Yakimov, E., Kushnarev, B.O., Shchemerov, I., Scheglov, M., Chernykh, A., Vasilev, A., Kochkova, A., Pearton, S.J. Electrical properties of α-Ga2O3films grown by halide vapor phase epitaxy on sapphire with α-Cr2O3buffers, (2022) Journal of Applied Physics, 131 (21), art. no. 215701.
  • Polyakov, A.Y., Nikolaev, V.I., Pechnikov, A.I., Stepanov, S.I., Yakimov, E.B., Scheglov, M.P., Shchemerov, I.V., Vasilev, A.A., Kochkova, A.I., Chernykh, A.V., Chikiryaka, A.V., Pearton, S.J. Structural and electrical properties of thick κ -Ga2O3grown on GaN/sapphire templates, (2022) APL Materials, 10 (6), art. no. 061102. Link
  • Polyakov, A.Y., Nikolaev, V.I., Yakimov, E.B., Ren, F., Pearton, S.J., Kim, J. Deep level defect states in β-, α-, and ϵ-Ga2O3crystals and films: Impact on device performance. (2022) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 40 (2), art. no. 020804. Link
  • Vergeles, P.S., Kulanchikov, Y.O., Polyakov, A.Y., Yakimov, E.B., Pearton, S.J. Communication — Electron-Beam Stimulated Release of Dislocations from Pinning Sites in GaN. (2022) ECS Journal of Solid State Science and Technology, 11 (1), art. no. 015003. Link
  • Yakimov, E.B., Polyakov, A.Y., Pearton, S.J. Betavoltaic cell based on Ni/β-Ga2O3and 63Ni source/ (2022) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 40 (1), art. no. 010401. Link
  • Polyakov, A.Y., Alexanyan, L.A., Skorikov, M.L., Chernykh, A.V., Shchemerov, I.V., Murashev, V.N., Kim, T.-H., Lee, I.-H., Pearton, S.J. Corrigendum to “Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells” [J. Alloy. Compd. 868 (2021) 159211] (Journal of Alloys and Compounds (2021) 868, (S0925838821006198), (10.1016/j.jallcom.2021.159211)). (2021) Journal of Alloys and Compounds, 888, art. no. 161947.
  • Sharma, R., Law, M.E., Ren, F., Polyakov, A.Y., Pearton, S.J. Diffusion of dopants and impurities in β-Ga2O3. (2021) Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 39 (6), art. no. 060801.
  • Polyakov, A.Y., Shchemerov, I.V., Vasilev, A.A., Kochkova, A.I., Smirnov, N.B., Chernykh, A.V., Yakimov, E.B., Lagov, P.B., Pavlov, Y.S., Ivanov, E.M., Gorbatkova, O.G., Drenin, A.S., Letovaltseva, M.E., Xian, M., Ren, F., Kim, J., Pearton, S.J. 1 GeV proton damage in β-Ga2O3. (2021) Journal of Applied Physics, 130 (18), art. no. 185701.
  • Yakimov, E.B., Polyakov, A.Y., Shchemerov, I.V., Smirnov, N.B., Vasilev, A.A., Kochkova, A.I., Vergeles, P.S., Yakimov, E.E., Chernykh, A.V., Xian, M., Ren, F., Pearton, S.J. On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors. (2021) Journal of Alloys and Compounds, 879, art. no. 160394.
  • Yakimov, E.B., Vergeles, P.S., Polyakov, A.Y., Shchemerov, I.V., Chernyh, A.V., Vasilev, A.A., Kochkova, A.I., Lee, I.-H., Pearton, S.J. Dislocations introduced in n-GaN at room temperature cause conductivity inversion. (2021) Journal of Alloys and Compounds, 877, art. no. 160281.
  • Polyakov, A.Y., Smirnov, N.B., Shchemerov, I.V., Vasilev, A.A., Kochkova, A.I., Chernykh, A.V., Lagov, P.B., Pavlov, Y.S., Stolbunov, V.S., Kulevoy, T.V., Borzykh, I.V., Lee, I.-H., Ren, F., Pearton, S.J. Crystal orientation dependence of deep level spectra in proton irradiated bulk β-Ga2O3. (2021) Journal of Applied Physics, 130 (3), art. no. 035701.
  • Polyakov, A.Y., Alexanyan, L.A., Skorikov, M.L., Chernykh, A.V., Shchemerov, I.V., Murashev, V.N., Kim, T.-H., Lee, I.-H., Pearton, S.J. Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells. (2021) Journal of Alloys and Compounds, 868, art. no. 159211.
  • Yakimov, E.B., Polyakov, A.Y., Shchemerov, I.V., Smirnov, N.B., Vasilev, A.A., Vergeles, P.S., Yakimov, E.E., Chernykh, A.V., Ren, F., Pearton, S.J. Experimental estimation of electron-hole pair creation energy in β -Ga2O3. (2021) Applied Physics Letters, 118 (20), art. no. 202106.
  • Polyakov, A.Y., Nikolaev, V.I., Tarelkin, S.A., Pechnikov, A.I., Stepanov, S.I., Nikolaev, A.E., Shchemerov, I.V., Yakimov, E.B., Luparev, N.V., Kuznetsov, M.S., Vasilev, A.A., Kochkova, A.I., Voronova, M.I., Scheglov, M.P., Kim, J., Pearton, S.J. Electrical properties and deep trap spectra in Ga2O3films grown by halide vapor phase epitaxy on p-type diamond substrates. (2021) Journal of Applied Physics, 129 (18), art. no. 185701.
  • Son, H., Uthirakumar, P., Chung, T.-H., Polyakov, A.Y., Lee, I.-H. Influence of Ga-halogen bond formation at the interface of nanoporous GaN photoelectrodes for enhanced photoelectrochemical water splitting efficiency. (2021) Applied Surface Science, 547, art. no. 149105.
  • Vergeles, P.S., Yakimov, E.B., Polyakov, A.Y., Shchemerov, I.V., Chernykh, A.V., Vasilev, A.A., Kochkova, A.I., Lee, I.-H., Pearton, S.J. Parasitic p-n junctions formed at V-pit defects in p-GaN. (2021) Journal of Applied Physics, 129 (15), art. no. 155702.
  • Shikoh, A.S., Polyakov, A.Y., Gostishchev, P., Saranin, D.S., Shchemerov, I.V., Didenko, S.I., Di Carlo, A. On the relation between mobile ion kinetics, device design, and doping in double-cation perovskite solar cells. (2021) Applied Physics Letters, 118 (9), art. no. 093501.
  • Orlov, V.I., Polyakov, A.Y., Vergeles, P.S., Yakimov, E.B., Kim, G.C., Lee, I.-H. Estimations of activation energy for dislocation mobility in p-GaN. (2021) ECS Journal of Solid State Science and Technology, 10 (2), art. no. 026004.
  • Stepanov, S., Nikolaev, V., Pechnikov, A., Scheglov, M., Chikiryaka, A., Chernykh, A., Odnobludov, M., Andreeva, V., Polyakov, A.Y. Halide Vapor Phase Epitaxy of In2O3 and (In1−xGax)2O3 on Sapphire Substrates and GaN/Al2O3 Templates. (2021) Physica Status Solidi (A) Applications and Materials Science, 218 (3), art. no. 2000442.
  • Stepanov, S.I., Nikolaev, V.I., Almaev, A.V., Pechnikov, A.I., Scheglov, M.P., Chikiryaka, A.V., Kushnarev, B.O., Polyakov, A.Y. HVPE GROWTHOF CORUNDUM-STRUCTURED α-Ga2O3 on SAPPHIRE SUBSTRATES with α-Cr2O3 BUFFER LAYER. (2021) Materials Physics and Mechanics, 47 (4), pp. 577-581.
  • Mochalov, L., Logunov, A., Kudryashov, M., Prokhorov, I., Sazanova, T., Yunin, P., Pryakhina, V., Vorotuntsev, I., Malyshev, V., Polyakov, A., Pearton, S.J. Heteroepitaxial growth of Ga2O3thin films of various phase composition by oxidation of Ga in hydrogen-oxygen plasmas. (2021) ECS Journal of Solid State Science and Technology, 10 (7), art. no. 073002.
  • Pearton, S.J., Aitkaliyeva, A., Xian, M., Ren, F., Khachatrian, A., Ildefonso, A., Islam, Z., Jafar Rasel, M.A., Haque, A., Polyakov, A.Y., Kim, J. Review-Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors. (2021) ECS Journal of Solid State Science and Technology, 10 (5), art. no. 055008.
  • Polyakov, A.Y., Haller, C., Butté, R., Smirnov, N.B., Alexanyan, L.A., Kochkova, A.I., Shikoh, S.A., Shchemerov, I.V., Chernykh, A.V., Lagov, P.B., Pavlov, Y.S., Carlin, J.-F., Mosca, M., Grandjean, N., Pearton, S.J. Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers. (2020) Journal of Alloys and Compounds, 845, art. no. 156269.
  • Yakimov, E.B., Polyakov, A.Y., Smirnov, N.B., Shchemerov, I.V., Vergeles, P.S., Yakimov, E.E., Chernykh, A.V., Xian, M., Ren, F., Pearton, S.J. Role of hole trapping by deep acceptors in electron-beam-induced current measurements in β-Ga2O3 vertical rectifiers. (2020) Journal of Physics D: Applied Physics, 53 (49), art. no. 495108.
  • Yakimov, E.B., Polyakov, A.Y., Shchemerov, I.V., Smirnov, N.B., Vasilev, A.A., Vergeles, P.S., Yakimov, E.E., Chernykh, A.V., Shikoh, A.S., Ren, F., Pearton, S.J. Photosensitivity of Ga2O3Schottky diodes: Effects of deep acceptor traps present before and after neutron irradiation. (2020) APL Materials, 8 (11), art. no. 111105.
  • Polyakov, A.Y., Haller, C., Butté, R., Smirnov, N.B., Alexanyan, L.A., Shikoh, A.S., Shchemerov, I.V., Chernykh, S.V., Lagov, P.B., Pavlov, Yu.S., Kochkova, A.I., Carlin, J.F., Mosca, M., Grandjean, N., Pearton, S.J. Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer. (2020) Journal of Physics D: Applied Physics, 53 (44), art. no. 445111.
  • Shikoh, A.S., Paek, S., Polyakov, A.Y., Smirnov, N.B., Shchemerov, I.V., Saranin, D.S., Didenko, S.I., Ahmad, Z., Touati, F., Nazeeruddin, M.K. Assessing mobile ions contributions to admittance spectra and current-voltage characteristics of 3D and 2D/3D perovskite solar cells. (2020) Solar Energy Materials and Solar Cells, 215, art. no. 110670.
  • Polyakov, A.Y., Lee, I.-H., Smirnov, N.B., Shchemerov, I.V., Vasilev, A.A., Chernykh, A.V., Pearton, S.J. Electric field dependence of major electron trap emission in bulk β-Ga2O3: Poole-Frenkel effect versus phonon-assisted tunneling. (2020) Journal of Physics D: Applied Physics, 53 (30), art. no. 304001.
  • Polyakov, A.Y., Smirnov, N.B., Shchemerov, I.V., Vasilev, A.A., Yakimov, E.B., Chernykh, A.V., Kochkova, A.I., Lagov, P.B., Pavlov, Y.S., Kukharchuk, O.F., Suvorov, A.A., Garanin, N.S., Lee, I.-H., Xian, M., Ren, F., Pearton, S.J. Pulsed fast reactor neutron irradiation effects in Si doped n-type β-Ga2O3. (2020) Journal of Physics D: Applied Physics, 53 (27), art. no. 274001.
  • Polyakov, A.Y., Lee, I.-H., Miakonkikh, A., Chernykh, A.V., Smirnov, N.B., Shchemerov, I.V., Kochkova, A.I., Vasilev, A.A., Pearton, S.J. Anisotropy of hydrogen plasma effects in bulk n-type β-Ga2O3. (2020) Journal of Applied Physics, 127 (17), art. no. 175702.
  • Nikolaev, V.I., Pechnikov, A.I., Guzilova, L.I., Chikiryaka, A.V., Shcheglov, M.P., Nikolaev, V.V., Stepanov, S.I., Vasil’ev, A.A., Shchemerov, I.V., Polyakov, A.Y. Thick Epitaxial α-Ga2O3:Sn Layers on a Patterned Sapphire Substrate. (2020) Technical Physics Letters, 46 (3), pp. 228-230.
  • Shikoh, A.S., Polyakov, A.Y., Smirnov, N.B., Shchemerov, I.V., Saranin, D.S., Didenko, S.I., Kuznetsov, D.V., Agresti, A., Pescetelli, S., Di Carlo, A. Ion Dynamics in Single and Multi-Cation Perovskite. (2020) ECS Journal of Solid State Science and Technology, 9 (6), art. no. 065015.
  • Ren, F., Pearton, S., Kim, J., Polyakov, A., Von Wenckstern, H., Singh, R., Lu, X. Preface — JSS Focus Issue on Gallium Oxide Based Materials and Devices II. (2020) ECS Journal of Solid State Science and Technology, 9 (6), art. no. 060001.
  • Islam, Z., Haque, A., Glavin, N., Xian, M., Ren, F., Polyakov, A.Y., Kochkova, A., Tadjer, M., Pearton, S.J. In Situ Transmission Electron Microscopy Observations of Forward Bias Degradation of Vertical Geometry β-Ga2O3Rectifiers. (2020) ECS Journal of Solid State Science and Technology, 9 (5), art. no. 055008.
  • Kim, H., Tarelkin, S., Polyakov, A., Troschiev, S., Nosukhin, S., Kuznetsov, M., Kim, J. Ultrawide-Bandgap p-n Heterojunction of Diamond/β-Ga2O3 for a Solar-Blind Photodiode. (2020) ECS Journal of Solid State Science and Technology, 9 (4), art. no. 045004.
  • Polyakov, A.Y., Nikolaev, V.I., Stepanov, S.I., Pechnikov, A.I., Yakimov, E.B., Smirnov, N.B., Shchemerov, I.V., Vasilev, A.A., Kochkova, A.I., Chernykh, A.V., Pearton, S.J. Editors’ Choice — Electrical Properties and Deep Traps in α-Ga2O3:Sn Films Grown on Sapphire by Halide Vapor Phase Epitaxy. (2020) ECS Journal of Solid State Science and Technology, 9 (4), art. no. 045003.
  • Polyakov, A.Y., Haller, C., Smirnov, N.B., Shiko, A.S., Shchemerov, I.V., Chernykh, S.V., Alexanyan, L.A., Lagov, P.B., Pavlov, Y.S., Carlin, J.-F., Mosca, M., Butté, R., Grandjean, N., Pearton, S.J. Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes. (2019) Journal of Applied Physics, 126 (12), art. no. 125708.
  • Polyakov, A.Y., Lee, I.-H., Smirnov, N.B., Yakimov, E.B., Shchemerov, I.V., Chernykh, A.V., Kochkova, A.I., Vasilev, A.A., Ren, F., Carey, P.H., IV, Pearton, S.J. Hydrogen plasma treatment of β -Ga2O3: Changes in electrical properties and deep trap spectra. (2019) Applied Physics Letters, 115 (3), art. no. 032101.
  • Polyakov, A.Y., Shmidt, N.M., Smirnov, N.B., Shchemerov, I.V., Shabunina, E.I., Tal’nishnih, N.A., Lee, I.-H., Alexanyan, L.A., Tarelkin, S.A., Pearton, S.J. Deep trap analysis in green light emitting diodes: Problems and solutions. (2019) Journal of Applied Physics, 125 (21), art. no. 215701.
  • Polyakov, A.Y., Lee, I.-H., Smirnov, N.B., Yakimov, E.B., Shchemerov, I.V., Chernykh, A.V., Kochkova, A.I., Vasilev, A.A., Carey, P.H., Ren, F., Smith, D.J., Pearton, S.J. Defects at the surface of β -Ga2O3 produced by Ar plasma exposure. (2019) APL Materials, 7 (6), art. no. 061102.
  • Polyakov, A.Y., Smirnov, N.B., Shchemerov, I.V., Yakimov, E.B., Nikolaev, V.I., Stepanov, S.I., Pechnikov, A.I., Chernykh, A.V., Shcherbachev, K.D., Shikoh, A.S., Kochkova, A., Vasilev, A.A., Pearton, S.J. Deep trap spectra of Sn-doped α-Ga2O3 grown by halide vapor phase epitaxy on sapphire. (2019) APL Materials, 7 (5), art. no. 051103.
  • Polyakov, A.Y., Kim, T., Lee, I.-H., Pearton, S.J. III-Nitride Nanowires as Building Blocks for Advanced Light Emitting Diodes. (2019) Physica Status Solidi (B) Basic Research, 256 (5), art. no. 1800589.
  • Polyakov, A.Y., Smirnov, N.B., Schemerov, I.V., Chernykh, A.V., Yakimov, E.B., Kochkova, A.I., Yang, J., Fares, C., Ren, F., Pearton, S.J. Deep traps and persistent photocapacitance in β-(Al0.14 Ga0.86)2O3/Ga2O3 heterojunctions. (2019) Journal of Applied Physics, 125 (9), art. no. 095702.
  • Vergeles, P.S., Orlov, V.I., Polyakov, A.Y., Yakimov, E.B., Kim, T., Lee, I.-H. Recombination and optical properties of dislocations gliding at room temperature in GaN under applied stress. (2019) Journal of Alloys and Compounds, 776, pp. 181-186.
  • Polyakov, A.Y., Lee, I.-H., Smirnov, N.B., Yakimov, E.B., Shchemerov, I.V., Chernykh, A.V., Kochkova, A.I., Vasilev, A.A., Shiko, A.S., Carey, P.H., Ren, F., Pearton, S.J. Effects of hydrogen plasma treatment condition on electrical properties of β-Ga2O3. (2019) ECS Journal of Solid State Science and Technology, 8 (11), pp. P661-P666.
  • Ren, F., Singh, R., Pearton, S., Kim, J., Polyakov, A., Ringel, S., Jia, R. Preface—JSS focus issue on gallium oxide based materials and devices. (2019) ECS Journal of Solid State Science and Technology, 8 (7).
  • Polyakov, A.Y., Smirnov, N.B., Shchemerov, I.V., Chernykh, S.V., Oh, S., Pearton, S.J., Ren, F., Kochkova, A., Kim, J. Defect states determining dynamic trapping-detrapping in β-Ga2O3 field-effect transistors. (2019) ECS Journal of Solid State Science and Technology, 8 (7), pp. Q3013-Q3018.
  • Polyakov, A.Y., Smirnov, N.B., Schemerov, I.V., Chernykh, A.V., Yakimov, E.B., Kochkova, A.I., Tereshchenko, A.N., Pearton, S.J. Electrical Properties, Deep Levels and Luminescence Related to Fe in Bulk Semi-Insulating β-Ga2O3 Doped with Fe. (2019) ECS Journal of Solid State Science and Technology, 8 (7), pp. Q3091-Q3096.
  • Polyakov, A.Y., Smirnov, N.B., Shchemerov, I.V., Yakimov, E.B., Pearton, S.J., Ren, F., Chernykh, A.V., Gogova, D., Kochkova, A.I. Electrical properties, deep trap and luminescence spectra in semi-insulating, czochralski β-Ga2O3 (Mg). (2019) ECS Journal of Solid State Science and Technology, 8 (7), pp. Q3019-Q3023.
  • Kim, J., Pearton, S.J., Fares, C., Yang, J., Ren, F., Kim, S., Polyakov, A.Y. Radiation damage effects in Ga2O3 materials and devices (2019) Journal of Materials Chemistry C, 7 (1), pp. 10-24.
  • Polyakov, A.Y., Smirnov, N.B., Shchemerov, I.V., Saranin, D.S., Le, T.S., Didenko, S.I., Kuznetsov, D.V., Agresti, A., Pescetelli, S., Matteocci, F., Di Carlo, A. Trap states in multication mesoscopic perovskite solar cells: A deep levels transient spectroscopy investigation (2018) Applied Physics Letters, 113 (26), art. no. 263501.
  • Lee, W.-W., Polyakov, A.Y., Kim, T., Lee, I.-H. Enhanced Luminescence of InGaN Quantum Well Structures with Localized Surface Plasmon by Using Sputter-Fabricated Ag Nanoparticles in an Ionic Liquid. (2018) Physica Status Solidi (A) Applications and Materials Science, 215 (24), art. no. 1800516.
  • Jeon, D.-W., Son, H., Hwang, J., Polyakov, A.Y., Smirnov, N.B., Shchemerov, I.V., Chernykh, A.V., Kochkova, A.I., Pearton, S.J., Lee, I.-H. Electrical properties, structural properties, and deep trap spectra of thin α-Ga2O3 films grown by halide vapor phase epitaxy on basal plane sapphire substrates. (2018) APL Materials, 6 (12), art. no. 121110.
  • Polyakov, A.Y., Smirnov, N.B., Shchemerov, I.V., Pearton, S.J., Ren, F., Chernykh, A.V., Kochkova, A.I. Electrical properties of bulk semi-insulating β-Ga2O3 (Fe). (2018) Applied Physics Letters, 113 (14), art. no. 142102.
  • Yom, H.-S., Yang, J.-K., Polyakov, A.Y., Lee, I.-H. Performance of InGaN/GaN light emitting diodes with n-GaN layer embedded with SiO2 nano-particles. (2018) Applied Sciences (Switzerland), 8 (9), art. no. 1574.
  • Polyakov, A.Y., Smirnov, N.B., Shchemerov, I.V., Pearton, S.J., Ren, F., Chernykh, A.V., Lagov, P.B., Kulevoy, T.V. Hole traps and persistent photocapacitance in proton irradiated β -Ga2O3 films doped with Si. (2018) APL Materials, 6 (9), art. no. 96102.
  • Polyakov, A.Y., Smirnov, N.B., Shchemerov, I.V., Yakimov, E.B., Pearton, S.J., Fares, C., Yang, J., Ren, F., Kim, J., Lagov, P.B., Stolbunov, V.S., Kochkova, A. Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3. (2018) Applied Physics Letters, 113 (9), art. no. 092102.
  • Svintsov, A.A., Krasnov, A.A., Polikarpov, M.A., Polyakov, A.Y., Yakimov, E.B. Betavoltaic battery performance: Comparison of modeling and experiment. (2018) Applied Radiation and Isotopes, 137, pp. 184-189.
  • Bae, K.-B., Lee, W.-W., Song, H.-Y., Yun, J.-H., Polyakov, A.Y., Lee, I.-H. Large Area Polymer Composite Films Embedded with Colloidal Quantum Dots for Efficient White Light Generation. (2018) Physica Status Solidi (A) Applications and Materials Science, 215 (10), art. no. 1700644.
  • Yun, J.-H., Polyakov, A.Y., Kim, K.-C., Yu, Y.T., Lee, D., Lee, I.-H. Enhanced luminescence of CsPbBr3perovskite nanocrystals on stretchable templates with Au/SiO2plasmonic nanoparticles. (2018) Optics Letters, 43 (10), pp. 2352-2355.
  • Yakimov, E.B., Polyakov, A.Y., Smirnov, N.B., Shchemerov, I.V., Yang, J., Ren, F., Yang, G., Kim, J., Pearton, S.J. Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current. (2018) Journal of Applied Physics, 123 (18), art. no. 185704.
  • Yakimov, E.B., Polyakov, A.Y., Vergeles, P.S. Temperature Dependence of Low-Energy Electron Beam Irradiation Effect on Optical Properties of MQW InGaN/GaN Structures (2018). Physica Status Solidi (B) Basic Research, 255 (5), art. no. 1700646.
  • Yakimov, E.B., Polyakov, A.Y., Lee, I.-H., Pearton, S.J. Recombination properties of dislocations in GaN. (2018) Journal of Applied Physics, 123 (16), art. no. 161543.

Polyakov, A.Y., Smirnov, N.B., Shchemerov, I.V., Gogova, D., Tarelkin, S.A., Pearton, S.J.

Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3

(2018) Journal of Applied Physics, 123 (11), art. no. 115702.

Polyakov, A.Y., Smirnov, N.B., Shchemerov, I.V., Yakimov, E.B., Yang, J., Ren, F., Yang, G., Kim, J., Kuramata, A., Pearton, S.J.

Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

(2018) Applied Physics Letters, 112 (3), art. no. 032107.

Polyakov, A.Y., Smirnov, N.B., Shchemerov, I.V., Yakimov, E.B., Yakimov, E.E., Kim, K.C., Lee, I.-H.

Quantum barrier growth temperature affects deep traps spectra of InGaN blue light emitting diodes

(2018) ECS Journal of Solid State Science and Technology, 7 (5), pp. Q80-Q84.

Polyakov, A.Y., Smirnov, N.B., Shchemerov, I.V., Yang, J., Ren, F., Lo, C.-F., Laboutin, O., Johnson, J.W., Pearton, S.J.

Trapping phenomena in InAlN/GaN high electron mobility transistors

(2018) ECS Journal of Solid State Science and Technology, 7 (2), pp. Q1-Q7.

Polyakov, A.Y., Shmidt, N.M., Smirnov, N.B., Shchemerov, I.V., Shabunina, E.I., Tal’nishnih, N.A., Lagov, P.B., Pavlov, Yu.S., Alexanyan, L.A., Pearton, S.J.

Defect states induced in GaN-based green light emitting diodes by electron irradiation

(2018) ECS Journal of Solid State Science and Technology, 7 (6), pp. P323-P328.

Polyakov, A.Y., Smirnov, N.B., Shchemerov, I.V., Gogova, D., Tarelkin, S.A., Lee, I.-H., Pearton, S.J.

Electrical properties of bulk, non-polar, semi-insulating M-GaN grown by the ammonothermal method

(2018) ECS Journal of Solid State Science and Technology, 7 (5), pp. P260-P265.