Публикации

  • A. Y. Polyakov, А. I. Kochkova, A. Azarov, V. Venkatachalapathy, A. V. Miakonkikh, A. A. Vasilev, A. V. Chernykh, I. V. Shchemerov, A. A. Romanov, A. Kuznetsov and S. J. Pearton. Tuning electrical properties in Ga2O3 polymorphs induced with ion beams. Journal of Applied Physics 133, 095701 (2023)
  • A.Y. Polyakov, A.A. Vasilev, I.V. Shchemerov, A.V. Chernykh, I.V. Shetinin, E.V. Zhevnerov, A.I. Kochkova, P.B. Lagov, A.V. Miakonkikh, Yu.S. Pavlov, U.A. Kobets, In-Hwan Lee, A. Kuznetsov, S.J. Pearton. Conducting surface layers formed by hydrogenation of O-implanted β-Ga2O3. Journal of Alloys and Compounds Volume 945, 5 June 2023, 169258
  • A. Y. Polyakov, A. I. Kochkova, Amanda Langørgen, Lasse Vines, A. Vasilev, I. V. Shchemerov, A. A. Romanov, and S. J. Pearton. On the possible nature of deep centers in Ga2O3. Journal of Vacuum Science & Technology A 41, 023401 (2023)
  • A.Y. Polyakov, V.I. Nikolaev, A.I. Pechnikov, E.B. Yakimov, S. Yu. Karpov, S.I. Stepanov, I.V. Shchemerov, A.A. Vasilev, A.V. Chernykh, A. Kuznetsov, In-Hwan Lee, S.J. Pearton. Two-dimensional hole gas formation at the κ-Ga2O3 /AlN heterojunction interface. Journal of Alloys and Compounds Volume 936, 5 March 2023, 168315
  • In-Hwan Lee, Tae-Hwan Kim, A.Y. Polyakov, A.V. Chernykh, M.L. Skorikov, E.B. Yakimov, L.A. Alexanyan, I.V. Shchemerov, A.A. Vasilev, S.J. Pearton. Degradation by sidewall recombination centers in GaN blue micro-LEDs at diameters<30 µm. Journal of Alloys and Compounds Volume 921, 15 November 2022, 166072
  • Alexander Y. Polyakov, Vladimir I. Nikolaev, Igor N. Meshkov, Krzysztof Siemek, Petr B. Lagov, Eugene B. Yakimov, Alexei I. Pechnikov, Oleg S. Orlov, Alexey A. Sidorin, Sergey I. Stepanov, Ivan V. Shchemerov, Anton A. Vasilev, Alexey V. Chernykh, Anton A. Losev, Alexandr D. Miliachenko, Igor A. Khrisanov, Yu.S. Pavlov, U. A. Kobets, and Stephen J. Pearton. Point defect creation by proton and carbon irradiation of α-Ga2O3. Journal of Applied Physics 132, 035701 (2022)